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PDF 2N6660 Data sheet ( Hoja de datos )
| Número de pieza | 2N6660 | |
| Descripción | N-Channel Enhancement-Mode Vertical DMOS FETs | |
| Fabricantes | Supertex Inc | |
| Logotipo |  |
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Supertex inc.
2N6660
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►►Free from secondary breakdown
►►Low power drive requirement
►►Ease of paralleling
►►Low CISS and fast switching speeds
►►Excellent thermal stability
►►Integral source-drain diode
►►High input impedance and high gain
►►Hi-Rel processing available
Applications
►►Motor controls
►► Converters
►► Amplifiers
►► Switches
►►Power supply circuits
►►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N6660 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Part Number Package Option Packing
2N6660
TO-39
500/Bag
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Product Summary
BVDSX/BVDGS
RDS(ON)
(max)
60V 3.0Ω
Pin Configuration
SOURCE
GATE
DRAIN
TO-39
(Case : Drain)
Product Marking
ID(ON)
(min)
1.5A
Doc.# DSFP-2N6660
D062813
2N6660
YYWW
YY = Year Sealed
WW = Week Sealed
Package may or may not include the following marks: Si or
TO-39
Supertex inc.
www.supertex.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6660.PDF ] | |
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