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PDF 2N6659 Data sheet ( Hoja de datos )
| Número de pieza | 2N6659 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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2N6659
MECHANICAL DATA
Dimensions in mm (inches)
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
2
13
2.54
(0.100)
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• Switching Regulators
• Converters
• Motor Drivers
45˚
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 3 – Drain
PIN 2 – Gate
CASE – Drain
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
VDS Drain – Source Voltage
35V
VGS Gate – Source Voltage
±20V
ID Drain Current
@ TCASE = 25°C
1.4A
ID Drain Current
@ TCASE = 100°C
1A
IDM Pulsed Drain Current *
3A
PD Power Dissipation
@ TCASE = 25°C
6.25W
PD Power Dissipation
@ TCASE = 100°C
2.5W
Tj Operating Junction Temperature Range
–55 to 150°C
Tstg Storage Temperature Range
TL Lead Temperature (1/16” from case for 10 sec.)
–55 to 150°C
300°C
* Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 4/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6659.PDF ] | |
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