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PDF K8P2815UQC Data sheet ( Hoja de datos )
| Número de pieza | K8P2815UQC | |
| Descripción | 128Mb C-die NOR FLASH | |
| Fabricantes | Samsung semiconductor | |
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Rev. 1.0, May. 2010
K8P2815UQC
128Mb C-die NOR FLASH
60FBGA & 84FBGA, Page Mode
2.7V ~ 3.6V
datasheet
http://www.DataSheet4U.net/
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved.
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datasheet pdf - http://www.DataSheet4U.net/
1 page  
K8P2815UQC
datasheet
Rev. 1.0
FLASH MEMORY
128M Bit (8M x16) Page Mode / Multi-Bank NOR Flash Memory
1.0 FEATURES
2.0 GENERAL DESCRIPTION
• Single Voltage, 2.7V to 3.6V for Read and Write operations
Voltage range of 2.7V to 3.1V valid for MCP product
• Organization
8M x16 bit (Word mode Only)
• Fast Read Access Time : 65ns
• Page Mode Operation
8 Words Page access allows fast asychronous read
Page Read Access Time : 25ns
• Read While Program/Erase Operation
• Multiple Bank architectures (4 banks)
Bank 0: 16Mbit (4Kw x 8 and 32Kw x 31)
Bank 1: 48Mbit (32Kw x 96)
Bank 2: 48Mbit (32Kw x 96)
Bank 3: 16Mbit (4Kw x 8 and 32Kw x 31)
• OTP Block : Extra 256 word
- 128word for factory and 128word for customer OTP
• Power Consumption (typical value)
- Active Read Current : 45mA (@10MHz)
- Program/Erase Current : 17mA
- Read While Program or Read While Erase Current : 35mA
- Standby Mode/Auto Sleep Mode : 15uA
• Support Single & Quad word accelerate program
• WP/ACC input pin
- Allows special protection of two outermost boot blocks at VIL,
regardless of block protect status
- Removes special protection of two outermost boot block at VIH,
the two blocks return to normal block protect status
- Accelerated Quadword Program time : 1.5us
• Erase Suspend/Resume
• Program Suspend/Resume
• Unlock Bypass Program
• Hardware RESET Pin
• Command Register Operation
• Block Protection / Unprotection
• Supports Common Flash Memory Interface
• Industrial Temperature : -40°C to 85°C
• Extended Temperature : -25°C to 85°C
• Endurance : 100,000 Program/Erase Cycles Minimum
• VIO options at 1.8V and 3V I/O
• Package options
- 80 Ball Fine-pitch BGA
(11x8mm, 0.8mm Ball Pitch)
- 64 Ball FBGA (13x11mm, 1.0mm Ball Pitch)
- 56 Pin TSOP (20x14mm)
The K8P2815UQC featuring single 3.0V power supply, is an 128Mbit NOR-
type Flash Memory organized as 8M x16. The memory architecture of the
device is designed to divide its memory arrays into 270 blocks with inde-
pendent hardware protection. This block architecture provides highly flexi-
ble erase and program capability. The K8P2815UQC NOR Flash consists
of four banks. This device is capable of reading data from one bank while
programming or erasing in the other banks.
The K8P2815UQC offers fast page access time of 25~30ns with random
access time of 65~70ns. The device′s fast access times allow high speed
microprocessors to operate without wait states. The device performs a pro-
gram operation in unit of 16 bits (Word) and erases in units of a block. Sin-
gle or multiple blocks can be erased. The block erase operation is
completed within typically 0.7 sec. The device requires 15mA as program/
erase current in the commercial and industrial temperature ranges.
The K8P2815UQC NOR Flash Memory is created by using Samsung's
advanced CMOS process technology. This device is available in 80/64 ball
FBGA and 56 Pin TSOP. The device is compatible with EPROM applica-
tions to require high-density and cost-effective non-volatile read/write stor-
age solutions.
http://www.DataSheet4U.net/
-5-
datasheet pdf - http://www.DataSheet4U.net/
5 Page 
K8P2815UQC
[Table 4] K8P2815UQC DEVICE BANK DIVISIONS
Bank
0
1
2
3
datasheet
Number of Blocks
8
31
96
96
31
8
Rev. 1.0
FLASH MEMORY
Block Size
4 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
4 Kwords
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