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PDF 2N6518 Data sheet ( Hoja de datos )

Número de pieza 2N6518
Descripción PNP Epitaxial Silicon Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! 2N6518 Hoja de datos, Descripción, Manual

2N6518
High Voltage Transistor
• Collector-Emitter Voltage: VCEO= -250V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6515
PNP Epitaxial Silicon Transistor
1 TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Derate above 25°C
TJ Junction Temperature
TSTG
Storage Temperature
Refer to 2N6520 for graphs
Value
-250
-250
-5
-500
-250
625
5
150
-55 ~ 150
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Parameter
* Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
VBE (on)
fT
Cob
CEB
tON
Base-Emitter On Voltage
* Current Gain Bandwidth Product
Output Capacitance
Emitter-Base Capacitance
Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width300µs, Duty Cycle2%
Test Condition
IC= -100µA, IE=0
IC= -1mA, IB=0
IE= -10µA, IC=0
VCB= -150V, IE=0
VEB= -4V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
VCE= -10V, IC= -100mA
VCE= -20V, IC= -10mA, f=20MHz
VCB= -20V, IE=0, f=1MHz
VEB= -0.5V, IC=0, f=1MHz
VBE (off)= -2V, VCC= -100V
IC= -50mA, IB1= -10mA
VCC= -100V, IC= -50mA
IB1=IB2=10mA
Min.
-250
-250
-5
35
50
50
45
25
40
Units
V
V
V
mA
mA
mW
mW/°C
°C
°C
Max.
-50
-50
Units
V
V
V
nA
nA
300
220
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
3.5
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002

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