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PDF 2N6517 Data sheet ( Hoja de datos )
| Número de pieza | 2N6517 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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2N6517
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=350V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6520
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
• Refer to 2N6515 for graphs
1 TO-92
1. Emitter 2. Base 3. Collector
Value
350
350
6
500
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
Cob
fT
* Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
* Current Gain Bandwidth Product
IC=1mA, IB=0
IC=100µA, IE=0
IE=10µA, IC=0
VCB=250V, IE=0
VEB=5V, IC=0
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
VCB=20V, IE=0, f=1MHz
IC=10mA, VCE=20V,
f=20MHz
VBE(on) Base Emitter On Voltage
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
IC=100mA, VCE=10V
Min.
350
350
6
20
30
30
20
15
40
Typ.
Max.
50
50
Units
V
V
V
nA
nA
200
200
0.3
0.35
0.5
1
0.75
0.85
0.9
6
200
V
V
V
V
V
V
V
pF
MHz
2V
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6517.PDF ] | |
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