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PDF 2N6491 Data sheet ( Hoja de datos )

Número de pieza 2N6491
Descripción COMPLEMENTARY SILICON POWER TRANSISTORS
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No Preview Available ! 2N6491 Hoja de datos, Descripción, Manual

2N6487, 2N6488 (NPN),
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N6487, 2N6490
2N6488, 2N6491
VCEO
60
80
Vdc
Collector−Base Voltage
2N6487, 2N6490
2N6488, 2N6491
VCB Vdc
70
90
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VEB 5.0 Vdc
IC 15 Adc
IB 5.0 Adc
PD
75 W
0.6 W/°C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
1.8 W
0.014
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
1.67
70
Unit
_C/W
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 16
1
www.onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 75 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
2N64xxG
AYWW
2N64xx = Specific Device Code
xx = See Table on Page 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet.
Publication Order Number:
2N6487/D

1 page




2N6491 pdf
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
5.0
TJ = 25°C
2.0
1.8
TJ = 25°C
1.6
IC = 1.0 A
1.4
1.2
1.0 IC = 1.0 A
4.0 A 8.0 A
4.0 A 8.0 A
0.8
0.6
0.4
0.2
10
20 50 100
200 500 1000 2000 5000
0
5.0 10
20 50 100
200 500 1000 2000 5000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.8 2.8
2.4 TJ = 25°C
2.0
2.4 TJ = 25°C
2.0
1.6 1.6
1.2
VBE(sat) = IC/IB = 10
0.8
1.2
VBE(sat) @ IC/IB = 10
0.8
0.4
0
0.2
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0.5 1.0
2.0
0.4 VBE @ VCE = 2.0 V
5.0 10
20
VCE(sat) @ IC/IB = 10
0
0.2 0.5 1.0
2.0
5.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
20
ORDERING INFORMATION
Device
2N6487G
2N6488G
2N6490G
2N6491G
Device Marking
2N6487
2N6488
2N6490
2N6491
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
http://onsemi.com
5
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail

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