|
|
PDF D1707 Data sheet ( Hoja de datos )
| Número de pieza | D1707 | |
| Descripción | NPN Transistor - 2SD1707 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de D1707 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Power Transistors
2SD1707
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1156
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• Full-pack package which can be installed to the heat sink with one
screw
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
130
80
7
20
30
100
3.0
150
−55 to +150
Unit
V
V
V
A
A
W
°C
http://www.DataSheet4U.net/
°C
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 3 A
VCE = 2 V, IC = 10 A
IC = 8 A, IB = 0.4 A
IC = 20 A, IB = 2 A
IC = 8 A, IB = 0.4 A
IC = 20 A, IB = 2 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 8 A, IB1 = 0.8 A, IB2 = − 0.8 A
VCC = 50 V
80 V
10 µA
50 µA
45
90 260
30
0.5 V
1.5
1.5 V
2.5
20 MHz
0.5 µs
2.0 µs
0.2 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: September 2003
SJD00211BED
1
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet D1707.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| D17006 | UPD17006 |  NEC |
| D17006AGF-011 | UPD17006AGF-011 | NEC |
| D1702 | NPN Transistor - 2SD1702 |  Renesas |
| D1703C | UPD1703C | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |