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PDF 2N6427 Data sheet ( Hoja de datos )
| Número de pieza | 2N6427 | |
| Descripción | NPN Darlington Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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Discrete POWER & Signal
Technologies
2N6427
MMBT6427
C
C
BE
TO-92
SOT-23
Mark: 1V
E
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
12
IC Collector Current - Continuous
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N6427
625
5.0
83.3
200
*MMBT6427
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6427.PDF ] | |
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