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PDF 2N6426 Data sheet ( Hoja de datos )

Número de pieza 2N6426
Descripción Darlington Transistors(NPN Silicon)
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! 2N6426 Hoja de datos, Descripción, Manual

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2N6426, 2N6427
2N6426 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
40
40
12
500
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR 3
BASE
2
EMITTER 1
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
642x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
x = 6 or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6426/D

1 page




2N6426 pdf
2N6426, 2N6427
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
SINGLE PULSE
SINGLE PULSE
ZqJC(t) = r(t) RqJC TJ(pk) − TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) RqJA TJ(pk) − TA = P(pk) ZqJA(t)
1.0 2.0
5.0 10
20 50
t, TIME (ms)
100 200
Figure 12. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
1.0 k
700
500
300 TA = 25°C
200
1.0 ms
TC = 25°C 100 ms
1.0 s
100
70
50
30 CURRENT LIMIT
20 THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
0.4 0.6 1.0
2.0
4.0 6.0 10
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 13. Active Region Safe Operating Area
FIGURE A
tP
PP
PP
t1
1/f
DUTY
CYCLE
+
t1
f
+
t1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient
Thermal Resistance Data
ORDERING INFORMATION
Device
Package
Shipping
2N6426G
TO−92
(Pb−Free)
5,000 Units / Bulk
2N6426RLRAG
TO−92
(Pb−Free)
2,000 / Tape & Ammo
2N6427G
TO−92
(Pb−Free)
5,000 Units / Bulk
2N6427RLRAG
TO−92
(Pb−Free)
2,000 / Tape & Ammo
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5

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