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Número de pieza | IRF6N60 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Suntac Electronic | |
Logotipo | ||
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GENERAL DESCRIPTION
FEATURES
IRF6N60
POWER MOSFET
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
Front View
SYMBOL
D
12 3
http://www.DataSheet4U.net/
G
S
N-Channel MOSFET
Page 1
datasheet pdf - http://www.DataSheet4U.net/
1 page PACKAGE DIMENSION
D
φ
TO-220
A
c1
IRF6N60
POWER MOSFET
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
e
b1 b
e1
Front View
R1.50
B
C
R3.18² 0.10
A1
c
Side View
TO-220FP
http://www.DataSheet4U.net/
I
J
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
φ
b
b1 b2
e
Front View
K
N
M
R
Side View
Back View
A
B
C
D
E
G
H
I
J
K
M
N
O
P
Q
R
b
b1
b2
e
Page 5
datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IRF6N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
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