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PDF 908E622 Datasheet ( Hoja de datos )

Número de pieza 908E622
Descripción Triple High-Side and EC Glass Driver
Fabricantes Freescale Semiconductor 
Logotipo Freescale Semiconductor Logotipo
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908E622 datasheet

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908E622 pdf
Terminal Connections
Table 1. Terminal Definitions (continued)
A functional description of each terminal can be found in the Functional Terminal Description section beginning on page 21.
Die Terminal Terminal Name
Formal Name
Definition
Analog
41
HVDD
Switchable VDD
Output
This terminal is a switchable VDD output for driving resistive loads
requiring a regulated 5.0 V supply; e.g. potentiometers.
Analog
42
VDD
Voltage Regulator The +5.0 V voltage regulator output terminal is intended to supply the
Output
embedded microcontroller.
Analog
43
VSS
Voltage Regulator Ground terminal for the connection of all non-power ground connections
Ground
(microcontroller and sensors).
EP
Exposed Pad
Exposed Pad
The exposed pad terminal on the bottom side of the package conducts
heat from the chip to the PCB board.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
908E622
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908E622 arduino
Static Electrical Characteristics
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40°C TJ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
High-Side Output HS1
Switch On Resistance
TJ = 25°C, ILOAD = 1.0 A
Overcurrent Shutdown
Overcurrent Shutdown blanking time (15)
Current to Voltage Ratio (16)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2 A)
High-Side Switching Frequency (15)
High-Side Free-Wheeling Diode Forward Voltage
TJ = 25°C, ILOAD = 1 A
Leakage Current
High-Side Outputs HS2 and HS3(17)
RDS(ON)-HS1
IHSOC1
tOCB
CRRATIOHS1
6.0
0.84
fPWMHS
VHSF
ILeakHS
185
4-8
1.2
0.9
<0.2
m
225
9.0 A
– µs
1.56 V/A
25 kHz
–V
10 µA
Switch On Resistance
TJ = 25°C, ILOAD = 1.0 A
RDS(ON)-HS23
Overcurrent Shutdown
Overcurrent Shutdown blanking time (15)
Current to Voltage Ratio (16)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2 A)
IHSOC23
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tOCB
CRRATIOHS23
High-Side Switching Frequency (15)
fPWMHS
High-Side Free-Wheeling Diode Forward Voltage
TJ = 25°C, ILOAD = 1 A
VHSF
Leakage Current
ILeakHS
Notes
15. This parameter is guaranteed by process monitoring but is not production tested.
16. This parameter is guaranteed only if correct trimming was applied.
17. The high-side HS3 can be only used for resistive loads.
3.6
1.16
440
4-8
1.66
0.9
<0.2
m
500
5.6 A
– µs
2.16 V/A
25 kHz
–V
10 µA
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E622
11
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