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PDF 908E622 Datasheet ( Hoja de datos )

Número de pieza 908E622
Descripción Triple High-Side and EC Glass Driver
Fabricantes Freescale Semiconductor 
Logotipo Freescale Semiconductor Logotipo

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908E622 Hoja de datos, Descripción, Manual
Freescale Semiconductor
Technical Data
MM908E622
Rev 1.0, 09/2005
Integrated Quad Half-Bridge,
Triple High-Side and EC Glass
Driver with Embedded MCU and
LIN for High End Mirror
The 908E622 is an integrated single-package solution that
includes a high-performance HC08 microcontroller with a
SMARTMOSTM analog control IC. The HC08 includes flash memory,
a timer, enhanced serial communications interface (ESCI), an
analog-to-digital converter (ADC), serial peripheral interface (SPI)
(only internal), and an internal clock generator module. The analog
control die provides four half-bridge and three high-side outputs with
diagnostic functions, an EC glass driver circuit, a Hall-Effect sensor
input, analog inputs, voltage regulator, window watchdog, and local
interconnect network (LIN) physical layer.
The single-package solution, together with LIN, provides optimal
application performance adjustments and space-saving PCB design.
It is well suited for the control of automotive high-end mirrors.
Features
• High-Performance M68HC908EY16 Core
• 16 K Bytes of On-Chip Flash Memory, 512 Bytes of RAM
• Internal Clock Generator Module (ICG)
• Two 16-Bit, 2-Channel Timers
• 10-Bit Analog-to-Digital Converter (ADC)
• LIN Physical Layer Interface
• Autonomous MCU Watchdog / MCU Supervision
• One Analog Input with Switchable Current Source
• Four Low RDS(ON) Half-Bridge Outputs
• Three Low RDS(ON) High-Side Outputs
• EC glass driver circuitry
• Wake-Up Input
• One 2/3-Pin Hall-Effect Sensor Input
12 Microcontroller I/Os
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908E622
908E622
QUAD HALF-BRIDGE, TRIPLE HIGH-SIDE
SWITCH AND EC GLASS CIRCUITRY WITH
EMBEDDED MCU AND LIN
DWB SUFFIX
98ARL10519D
54-TERMINAL SOICW-EP
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MM908E622ACDWB/R2 -40°C to 85°C 54 SOICW-EP
LIN VSUP[1:8] L0
Wake Up Input
VDDA/VREFH
EVDD
VDD
HB1
HB2
µC PortA
µC PortB
µC PortC
µC PortD
µC PortE
VSSA/VREFL
EVSS
VSS
RST_A
RST
IRQ_A
IRQ
PTA0/KBD0
PTA1/KBD1
PTA2/KBD2
PTA3/KBD3
PTA4/KBD4
PTB3/AD3
PTB4/AD4
PTB5/AD5
PTC2/MCLK
PTC3/OSC2
PTC4/OSC1
Internally connected PTD0/TACH0
PTD1/TACH1
Internally connected PTE1/RxD
GND[1:4] EP
HB3
HB4
HS1
HS2
HS3
ECR
EC
HVDD
A0
A0CST
H0
TESTMODE
MM
4 x Half Bridge Outputs
M
High Side Output 1
High Side Output 2
High Side Output 3
EC - Glas Control
Switched 5V output
Analog Input with current source
Analog Input current source trim
2-/3-pin hall sensor input
Pull to ground for user mode
Figure 1. 908E622 Simplified Application Diagram
This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
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908E622 pdf
Terminal Connections
Table 1. Terminal Definitions (continued)
A functional description of each terminal can be found in the Functional Terminal Description section beginning on page 21.
Die Terminal Terminal Name
Formal Name
Definition
Analog
41
HVDD
Switchable VDD
Output
This terminal is a switchable VDD output for driving resistive loads
requiring a regulated 5.0 V supply; e.g. potentiometers.
Analog
42
VDD
Voltage Regulator The +5.0 V voltage regulator output terminal is intended to supply the
Output
embedded microcontroller.
Analog
43
VSS
Voltage Regulator Ground terminal for the connection of all non-power ground connections
Ground
(microcontroller and sensors).
EP
Exposed Pad
Exposed Pad
The exposed pad terminal on the bottom side of the package conducts
heat from the chip to the PCB board.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
908E622
5
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908E622 arduino
Static Electrical Characteristics
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40°C TJ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
High-Side Output HS1
Switch On Resistance
TJ = 25°C, ILOAD = 1.0 A
Overcurrent Shutdown
Overcurrent Shutdown blanking time (15)
Current to Voltage Ratio (16)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2 A)
High-Side Switching Frequency (15)
High-Side Free-Wheeling Diode Forward Voltage
TJ = 25°C, ILOAD = 1 A
Leakage Current
High-Side Outputs HS2 and HS3(17)
RDS(ON)-HS1
IHSOC1
tOCB
CRRATIOHS1
6.0
0.84
fPWMHS
VHSF
ILeakHS
185
4-8
1.2
0.9
<0.2
m
225
9.0 A
– µs
1.56 V/A
25 kHz
–V
10 µA
Switch On Resistance
TJ = 25°C, ILOAD = 1.0 A
RDS(ON)-HS23
Overcurrent Shutdown
Overcurrent Shutdown blanking time (15)
Current to Voltage Ratio (16)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2 A)
IHSOC23
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tOCB
CRRATIOHS23
High-Side Switching Frequency (15)
fPWMHS
High-Side Free-Wheeling Diode Forward Voltage
TJ = 25°C, ILOAD = 1 A
VHSF
Leakage Current
ILeakHS
Notes
15. This parameter is guaranteed by process monitoring but is not production tested.
16. This parameter is guaranteed only if correct trimming was applied.
17. The high-side HS3 can be only used for resistive loads.
3.6
1.16
440
4-8
1.66
0.9
<0.2
m
500
5.6 A
– µs
2.16 V/A
25 kHz
–V
10 µA
Analog Integrated Circuit Device Data
Freescale Semiconductor
908E622
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