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PDF 2N6350 Data sheet ( Hoja de datos )
| Número de pieza | 2N6350 | |
| Descripción | NPN DARLINGTON POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
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TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472
Devices
2N6350
2N6351
2N6352
2N6353
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
VCER
VCBO
VEBO
IB
IC
Total Power Dissipation @ TA = 250C
@ TC = 1000C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
PT
TJ, Tstg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50%
2) Derate linearly @ 5.72 mW/0C above TA > 250C
3) Derate linearly @ 50 mW/0C above TC > 1000C
4) Derate linearly @ 11.4 mW/0C above TA > 250C
5) Derate linearly @ 250 mW/0C above TC > 1000C
RθJC
2N6350 2N6351
2N6352 2N6353
80 150
80 150
12
6.0
0.5
5.0
10(1)
2N6350 2N6352
2N6351
1.0(2)
5.0(3)
2N6353
2.0(4)
25(5)
-65 to +200
2N6350 2N6352
2N6351 2N6353
20 4.0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 25 mAdc, RB1E = 2.2 kΩ, RB2E = 100 Ω
2N6350, 2N6352
2N6351, 2N6353
V(BR)CER
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W
0C
2N6350, 2N6351
TO-33*
Unit
0C/W
2N6352, 2N6353
TO-24* (TO-213AA)
*See Appendix A for
package outline
Min. Max.
Unit
80 Vdc
150
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6350.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N6350 | NPN DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
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| 2N6350 | Trans Darlington NPN 80V 5A 4-Pin TO-33 |  New Jersey Semiconductor |
| 2N6351 | NPN DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
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