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Número de pieza | 2N6338 | |
Descripción | POWER TRANSISTORS NPN SILICON | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6338/D
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and switching circuit
applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — 2N6338
VCEO(sus) = 120 Vdc (Min) — 2N6339
VCEO(sus) = 140 Vdc (Min) — 2N6340
VCEO(sus) = 150 Vdc (Min) — 2N6341
• High DC Current Gain —
hFE = 30 – 120 @ IC = 10 Adc
hFE = 12 (Min) @ IC = 25 Adc
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc
tr = 0.3 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎts = 1.0 µs (Max)
tf = 0.25 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Complement to 2N6436–38
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎContinuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCB
VCEO
VEB
IC
IB
PD
TJ, Tstg
2N6338
120
100
2N6339 2N6340
140 160
120 140
6.0
25
50
10
200
1.14
– 65 to + 200
2N6341
180
150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
Symbol
θJC
Max
0.875
Unit
_C/W
200
175
150
125
100
75
50
25
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
175 200
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
2N6338
2N6339
2N6340
2N6341*
*Motorola Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2N6338.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N6330 | (2N6329 - 2N6331) PNP SIlicon Power Transistor | Magna |
2N6330 | PNP Silicon Power Transistor | Texas |
2N6331 | (2N6329 - 2N6331) PNP SIlicon Power Transistor | Magna |
2N6331 | PNP Silicon Power Transistor | Texas |
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