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PDF TIC246M Data sheet ( Hoja de datos )

Número de pieza TIC246M
Descripción (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR
Fabricantes Comset Semiconductors　
Logotipo Comset Semiconductors Logotipo



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No Preview Available ! TIC246M Hoja de datos, Descripción, Manual

SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• High current triacs
• 16 A RMS
• 70 A Peak
• Glass Passivated Wafer
• 200 V to 800 V Off-State Voltage
• Max IGT of 50 mA (Quadrants 1-3)
• 125 A peak current
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to
the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
http://www.DataSheet4U.net/
Symbol
Ratings
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from
case for 10 seconds
Value
Unit
B C D EMSN
200 300 400 500 600 700 800
V
16 A
125
±1
-40 to +110
-40 to +125
230
A
A
°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R∂JC Junction to case thermal resistance
R∂JA Junction to free air thermal resistance
30/10/2012
COMSET SEMICONDUCTORS
Value
≤ 1.9
≤ 62.5
Unit
°C/W
1|3
datasheet pdf - http://www.DataSheet4U.net/

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