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PDF TIC225E Data sheet ( Hoja de datos )

Número de pieza TIC225E
Descripción (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR
Fabricantes Comset Semiconductors 
Logotipo Comset Semiconductors Logotipo



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No Preview Available ! TIC225E Hoja de datos, Descripción, Manual

SEMICONDUCTORS
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M,
TIC225N, TIC225S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
Sensitive gate triacs
8 A RMS
70 A Peak
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 50 mA (Quadrants 1)
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
http://www.DataSheet4U.net/
Symbol
Ratings
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak on-state surge current
half-sine-wave (see Note4)
Peak gate current
Peak gate power dissipation at
(or below) 85°C case temperature
(pulse width 200 µs)
Average gate power dissipation at
(or below) 85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from
case for 10 seconds
Value
Unit
ABCDEMSN
100 200 300 400 500 600 700 800
V
8A
70 A
8A
±1 A
2.2 W
0.9
-40 to +110
-40 to +125
230
W
°C
°C
°C
30/10/2012
COMSET SEMICONDUCTORS
1|4
datasheet pdf - http://www.DataSheet4U.net/

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