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PDF TIC206N Data sheet ( Hoja de datos )
| Número de pieza | TIC206N | |
| Descripción | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
| Fabricantes | Comset Semiconductors | |
| Logotipo |  |
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SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• 4 A RMS
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max IGT of 5 mA (Quadrants 1-3)
• Sensitive gate triacs
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
http://www.DataSheet4U.net/
Symbol
Ratings
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak on-state surge current
half-sine-wave (see Note4)
Peak gate current
Peak gate power dissipation at
(or below) 85°C case temperature
(pulse width ≤200 µs)
Average gate power dissipation at
(or below) 85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
Value
Unit
A B DMS N
100 200 400 600 700 800
V
4A
25
30
± 0.2
1.3
A
A
A
W
0.3
-40 to +110
-40 to +125
230
W
°C
°C
°C
30/10/2012
COMSET SEMICONDUCTORS
1|4
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TIC206N.PDF ] | |
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