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PDF TIC126N Data sheet ( Hoja de datos )

Número de pieza TIC126N
Descripción (TIC126x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
Fabricantes Comset Semiconductors 
Logotipo Comset Semiconductors Logotipo



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No Preview Available ! TIC126N Hoja de datos, Descripción, Manual

SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE
THYRISTORS
12 A Continuous On-State Current
100 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 20 mA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDRM
VRRM
IT(RMS)
IT(AV)
ITM
IGM
PGM
PG(AV)
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
Continuous on-state current at
(or below) 70°C case temperature
(see note2)
Average on-state current
(180° conduction angle) at(or below)
70°C case temperature (see Note3)
Surge on-state current (see Note4)
Peak positive gate current
(pulse width 300 µs)
Peak power dissipation
(pulse width 300 µs)
Average gate power dissipation
(see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
http://www.DataSheet4U.net/
Value
Unit
ABCDEMSN
100 200 300 400 500 600 700 800
100 200 300 400 500 600 700 800
V
V
12 A
7.5
100
3
5
1
-40 to +110
-40 to +125
230
A
A
A
W
W
°C
°C
°C
30/10/2012
COMSET SEMICONDUCTORS
1|4
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