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PDF TIC108N Data sheet ( Hoja de datos )

Número de pieza TIC108N
Descripción SILICON CONTROLLED RECTIFIERS
Fabricantes Comset Semiconductors 
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No Preview Available ! TIC108N Hoja de datos, Descripción, Manual

SEMICONDUCTORS
TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,
TIC108N, TIC108S
SILICON CONTROLLED RECTIFIERS
5 A Continuous On-State Current
20 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 1 mA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VDRM
VRRM
IT(RMS)
IT(AV)
ITM
IGM
PGM
PG(AV)
TC
Tstg
TL
Notes:
ABCDEMSN
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
100
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100
200
200
300
300
400
400
500
500
600
600
700
700
800
800
Continuous on-state current at (or below)
80°C case temperature (see note2)
5
Average on-state current (180° conduction
angle) at(or below) 80°C case temperature
3.2
(see Note3)
Surge on-state current (see Note4)
20
Peak positive gate current (pulse width
300 µs)
0.2
Peak power dissipation (pulse width 300
µs)
1.3
Average gate power dissipation (see
Note5)
0.3
Operating case temperature range
-40 to +110
Storage temperature range
-40 to +125
Lead temperature 1.6 mm from case for 10
seconds
230
1. These values apply when the gate-cathode resistance RGK = 1k
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to
zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 80°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
V
V
A
A
A
A
W
W
°C
°C
°C
21/06/2012
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