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PDF TIP130 Data sheet ( Hoja de datos )
| Número de pieza | TIP130 | |
| Descripción | Silicon NPN Darlington Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP130
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
·Complement to Type TIP135
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5
http://www.DataSheet4U.net/
V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
12 A
IBB Base Current- Continuous
Collector Power Dissipation
PC
@TC=25℃
Collector Power Dissipation
@Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
0.3
70
2
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.785 ℃/W
Thermal Resistance,Junction to Ambient 63.5 ℃/W
isc Website：www.iscsemi.cn
datasheet pdf - http://www.DataSheet4U.net/
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet TIP130.PDF ] | |
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