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PDF BFW16A Data sheet ( Hoja de datos )

Número de pieza BFW16A
Descripción HF Wideband Transistors
Fabricantes Comset Semiconductors 
Logotipo Comset Semiconductors Logotipo



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No Preview Available ! BFW16A Hoja de datos, Descripción, Manual

 
NPN BFW16A
 
HF WIDEBAND TRANSISTORS
The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector
connected to the case. The transistor has extremely good intermodulation properties and a high
power gain.It is a ruggedized version of the BFW16, which it succeds.
It is primarily intended for :
•Final and driver stages of channel and band aerial amplifiers with high outpout power for
bands I , II , III , IV , V (40-860 MHz).
•Final stage of the wideband vertical amplifier in high speed oscilloscopes.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBOM
VEBO
VCERM
IC
ICM
Pt
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
(open emitter ; peak value)
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
IE = 0
www.DataSheet.net/
IC = 0
RBE<=50
@ TC = 125°
Value
25
40
2
40
150
300
1.5
200
-65 to +200
Unit
V
V
V
V
mA
mA
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJa
RthJmb
RthJmb-h
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
Thermal Resistance, Junction to Mounting Base to heatsink
Value
250
50
1.2
Unit
K/W
K/W
K/W
09/11/2012
 
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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