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PDF BDY25A Data sheet ( Hoja de datos )

Número de pieza BDY25A
Descripción HIGH CURRENT NPN SILICON TRANSISTOR
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BDY25A
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
12
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
NPN SILICON TRANSISTOR
FEATURES
HIGH CURRENT FAST SWITCHING
HIGH RELIABILITY
SCREENING OPTIONS AVAILABLE
Pin 1 = Base
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO204AA)
APPLICATIONS
SWITCHING CIRCUITS
LARGE SIGNAL/POWER AMPLIFIERS
Pin 2 = Emitter
Case = Collector
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ABSOLUTE MAXIMUM RATINGS
TCASE = 25°C unless otherwise stated
VCBO
Collector - Base Voltage
VCEO
Collector - Emitter Voltage
VEBO
IC
Emitter – Base Voltage
Continuous Collector Current
IB Base Current
Ptot Total Power Dissipation at Tcase = 25°C
Derate above 25°C
TJ Junction Temperature
Tstg Storage Temperature
200V
140V
10V
6A
3A
50W
0.29 W/°C
200°C
-65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
DOC 7595, ISSUE 1
Datasheet pdf - http://www.DataSheet4U.co.kr/

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