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Número de pieza | 2N6284 | |
Descripción | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! 2N6284 (NPN); 2N6286,
2N6287 (PNP)
Preferred Device
Darlington Complementary
Silicon Power Transistors
These packages are designed for general−purpose amplifier and
low−frequency switching applications.
Features
• High DC Current Gain @ IC = 10 Adc −
hFE = 2400 (Typ) − 2N6284
= 4000 (Typ) − 2N6287
• Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N6286
VCEO
80
Vdc
2N6284/87
100
Collector−Base Voltage
VCB
Vdc
2N6286
80
2N6284/87
100
Emitter−Base Voltage
Collector Current − Continuous
Peak
VEB 5.0 Vdc
IC
20 Adc
40
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB
PD
0.5
160
0.915
Adc
W
W/°C
Operating and Storage Temperature
Range
TJ, Tstg − 65 to + 200
°C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case RqJC
1.09 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 4
1
http://onsemi.com
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
COLLECTOR
CASE
BASE
1
EMITTER 2
MARKING DIAGRAM
21
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N628xG
AYYWW
MEX
2N628x
G
A
YY
WW
MEX
= Device Code
x = 4, 6 or 7
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
ORDERING INFORMATION
Device
Package
Shipping
2N6284
2N6284G
TO−3
TO−3
(Pb−Free)
100 Units/Tray
100 Units/Tray
2N6286
2N6286G
TO−3
TO−3
(Pb−Free)
100 Units/Tray
100 Units/Tray
2N6287
2N6287G
TO−3
TO−3
(Pb−Free)
100 Units/Tray
100 Units/Tray
Publication Order Number:
2N6284/D
1 page 2N6284 (NPN); 2N6286, 2N6287 (PNP)
NPN
2N6284
PNP
2N6287
20,000
10,000
7000
5000
3000
2000
VCE = 3.0 V
TJ = 150°C
25°C
30,000
20,000
10,000
7000
5000
3000
VCE = 3.0 V
TJ = 150°C
25°C
2000
1000 - 55°C
700
- 55°C
1000
500 700
300 500
200
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
20
3.0 3.0
TJ = 25°C
2.6
IC = 5.0 A
10 A
15 A
2.6
IC = 5.0 A
10 A
2.2 2.2
TJ = 25°C
15 A
1.8 1.8
1.4 1.4
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
20 30 50
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0 2.0
VBE(sat) @ IC/IB = 250
1.5
1.5 VBE(sat) @ IC/IB = 250
1.0 VBE @ VCE = 3.0 V
1.0 VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
0.5
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
20
http://onsemi.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet 2N6284.PDF ] |
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