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Datasheet BDV66A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDV66A | POWER TRANSISTORS(16A/60-100V/125W) A
A
A
|  Mospec Semiconductor | transistor |
| 2 | BDV66A | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C APPLICATIONS ·Designed for audio output stages and genera |  Inchange Semiconductor | transistor |
| 3 | BDV66A | PNP Darlington Power Transistor BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO Colle |  Comset Semiconductors | transistor |
BDV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDV-E280 | Blu-ray Disc/DVD Home Theatre System Operating Instructions 4-265-162-11(1)
Blu-ray Disc/DVD Home Theatre System
Operating Instructions
BDV-E280/BDV-T28
WARNING
comply with FCC technical regulations.
Do not install the appliance in a confined space, such as a bookcase or built-in cabinet. To reduce the risk of fire, do not cover the ventilation opening of  Sony data | | |
| 2 | BDV-T28 | Blu-ray Disc/DVD Home Theatre System Operating Instructions 4-265-162-11(1)
Blu-ray Disc/DVD Home Theatre System
Operating Instructions
BDV-E280/BDV-T28
WARNING
comply with FCC technical regulations.
Do not install the appliance in a confined space, such as a bookcase or built-in cabinet. To reduce the risk of fire, do not cover the ventilation opening of Sony data | | |
| 3 | BDV64 | POWER TRANSISTORS(12A/125W) A
A
A
A
Mospec Semiconductor transistor | | |
| 4 | BDV64 | PNP SILICON POWER DARLINGTONS BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 a  Power Innovations Limited data | | |
| 5 | BDV64 | PNP SILICON POWER DARLINGTONS TRSYS data | | |
| 6 | BDV64 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.
PINNING PIN 1 2 3 Base Colle  SavantIC transistor | | |
| 7 | BDV64 | Silicon PNP Darlington Power Transistor BDV64-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO
Rati Comset Semiconductors transistor | |
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