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PDF IRFS7437-7PPBF Data sheet ( Hoja de datos )

Número de pieza IRFS7437-7PPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFS7437-7PPBF Hoja de datos, Descripción, Manual

StrongIRFET™
IRFS7437-7PPbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
1.1mΩ
max. 1.4mΩ
cG
ID (Silicon Limited)
295A
S
ID (Package Limited)
195A
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen Free
G
Gate
D
S
SS
S
S
G
D2Pak 7 Pin
D
Drain
S
Source
Base Part Number
IRFS7437-7PPbF
Package Type
D2Pak-7PIN
Standard Pack
Form
Tube
Tape and Reel Left
Quantity
50
800
Orderable Part Number
IRFS7437-7PPbF
IRFS7437TRL7PP
4.0
ID = 100A
3.0
TJ = 125°C
2.0
TJ = 25°C
1.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
300
Limited By Package
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFS7437-7PPBF pdf
IRFS7437-7PPbF
10000
1000
100
TJ = 175°C
10
TJ = 25°C
VGS = 0V
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
49
Id = 1.0mA
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
10.0
8.0
6.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec 100μsec
Limited by
package
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-0.1
-5 0 5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical COSS Stored Energy
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
4.0
2.0
0.0
0
200 400 600 800 1000 1200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5 www.irf.com © 2015 International Rectifier
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IRFS7437-7PPBF arduino
IRFS7437-7PPbF
Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant
D2Pak-7PIN
Industrial††
(per JEDEC JESD47F††† guidelines)
MS L1
(per JE DE C J-S TD-020D†††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
4/30/2014
2/19/2015
Comment
Updated data sheet based on corporate template.
Updated package outline and part marking on page 9 & 10.
Updated EAS (L =1mH) = 796mJ on page 2
Updated note 10 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 40A, VGS =10V”. on page 2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2015 International Rectifier
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