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PDF 2N3227 Data sheet ( Hoja de datos )
| Número de pieza | 2N3227 | |
| Descripción | SILICON ANNULAR TRANSISTORS | |
| Fabricantes | Comset Semiconductor | |
| Logotipo |  |
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NPN 2N3227
SILICON ANNULAR TRANSISTORS
The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed
switching applications.
They are mounted in Jedec TO-18 metal.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
VCES
IC (peak)
PD
PD
TJ
TStg
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Value
40
20
6
40
Collector Current
TOTAL Device Dissipation Ambient Temperature
Derating Factore Above
TOTAL Device Dissipation Case Temperature .
Derating Factore Above
www.DataSheet.net/
Junction Temperature
Storage Temperature range
@ TC
25°
@ TC
25°
=
=
500
0.36
2.06
1.2
6.85
+200
-65 to +200
Unit
V
V
V
V
mA
Watts
mW/°C
Watts
mW/°C
°C
NPN 2N3227
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
ICEX
IBL
BVCBO
BVEBO
BVCEO
BVCES
Collector cut-off current
Collector cut-off curren
IE = 0 ; VCB = 20V
IE = 0 ; VCB = 20V ; TA = 150°C
VCE = 20V ; VEB(off) = 3V
Base cut-off curren
Collector-Base Breakdown
voltage
VCE = 20V ; VEB(off) = 3V
IC =10 µA ; IB = 0
Emitter-Base Breakdown
voltage
IE =10 µA ; IC = 0
Collector-Emitter Breakdown
voltage (1)
IC = 10 mA
Collector-Emitter voltage
IC =10 µA ; IB = 0
Min Typ Mx Unit
- - 0.2
- - 50
- - 0.2 µA
- - 0.5
40 - - V
6- -V
20 - - V
40 - - V
COMSET SEMICONDUCTORS
1/2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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| PDF Descargar | [ Datasheet 2N3227.PDF ] | |
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