(PDF) 2N3020 Datasheet - (2N3019 / 2N3020) SILICON PLANAR EPITAXIAL TRANSISTORS

Número de pieza	2N3020
Descripción	(2N3019 / 2N3020) SILICON PLANAR EPITAXIAL TRANSISTORS
Fabricantes	Comset Semiconductor
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No Preview Available ! NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature www.DataSheet.net/ @ Tamb = 25° @ Tcase= 25° Storage Temperature range 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Value 80 Unit V 140 V 7V 1A 0.8 Watts 5 200 °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N3019 2N3020 2N3019 2N3020 Value 35 219 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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PDF 2N3020 Data sheet ( Hoja de datos )