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PDF WSB1151 Data sheet ( Hoja de datos )
| Número de pieza | WSB1151 | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Wooseok | |
| Logotipo |  |
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HIGH CURRENT AMPLIFIER
◇ Low Collector Saturation Voltage
◇ Complement to WSD1691
WSB1151
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
Characteristic
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base voltage
VEBO
Collector Current(DC)
IC
Collector Current(Pulse)
IC
Collector Power Dissipation(Tc=25℃) PC
Collector Power Dissipation(Ta=25℃) PC
Junction Temperature
Tj
Storage Temperature
Tstg
Value
-60
-60
-7
-5.0
-8.0
20
1.3
150
-55~
+150
Unit
V
V
V
A
A
W
W
℃
℃
WR0459
1 23
1. Emitter
2. Collector
3. Base
ELECTRICAL CHARACTERISTICS
www.DataSheet.net/
(Ta=25℃, unless otherwise specified)
Characteristic
Collector Cut-off Current
Symbol
Test Condition
ICBO VCB=-50V ,IE=0
Min TYP
MA
X
Unit
-10 ㎂
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
IEBO VEB=-7V ,IC=0
hFE1
#hFE2
hFE3
VCE=-1V ,IC=-100mA
VCE=-1V ,IC=-2.0A
VCE=-2V, IC=-5.0A
VCE(sat) IC=-2A, IB=-200mA
-10
60
100 200 400
50
-0.14 -0.3
㎂
V
*Base-Emitter Saturation Voltage
Turn on Time
Storage Time
Fall Time
VBE(sat) IC=-2A, IB=-200mA
tON
tSTG
tF
IC=-2.0A, RL=5Ω
IB1=-IB2=200mA,
VCC=-10V
-0.9 -1.2
0.15 1
0.78 2.5
0.18 1
V
㎲
㎲
㎲
* Pulse Test :PW=350㎲ ,Duty Cycle=2% Pulsed
# hFE(2) Classification:
Classification
O
Y
hFE
100~200
160~320
G
200~400
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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| PDF Descargar | [ Datasheet WSB1151.PDF ] | |
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