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PDF 2N6075 Data sheet ( Hoja de datos )

Número de pieza 2N6075
Descripción Sensitive Gate Triacs
Fabricantes ETC 
Logotipo ETC Logotipo



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No Preview Available ! 2N6075 Hoja de datos, Descripción, Manual

2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
**Peak Repetitive Off-State Voltage(1)
(TJ = 40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM,
VRRM
200
400
600
Unit
Volts
*On-State RMS Current (TC = 85°C) IT(RMS) 4.0 Amps
Full Cycle Sine Wave 50 to 60 Hz
*Peak Non–repetitive Surge Current
(One Full cycle, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
30 Amps
3.7 A2s
*Peak Gate Power
(Pulse Width 1.0 µs, TC = 85°C)
*Average Gate Power
(t = 8.3 ms, TC = 85°C)
*Peak Gate Voltage
(Pulse Width 1.0 µs, TC = 85°C)
*Operating Junction Temperature Range
PGM
PG(AV)
VGM
TJ
10
0.5
5.0
–40 to
+110
Watts
Watt
Volts
°C
*Storage Temperature Range
Tstg
–40 to
°C
+150
Mounting Torque (6-32 Screw)(2)
— 8.0 in. lb.
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
http://onsemi.com
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
MT2
MT1
G
3
21
TO–225AA
(formerly TO–126)
CASE 077
STYLE 5
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
ORDERING INFORMATION
Device
2N6071A
2N6071B
Package
TO225AA
TO225AA
Shipping
500/Box
500/Box
2N6073A
TO225AA
500/Box
2N6073B
2N6075A
2N6075B
TO225AA
TO225AA
TO225AA
500/Box
500/Box
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
2N6071/D

1 page




2N6075 pdf
2N6071A/B Series
110
100
α = 30°
60°
90 90°
120°
180°
dc
a
80
α
70 α = CONDUCTION ANGLE
0 1.0
2.0
3.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 1. Average Current Derating
4.0
110
α = 30°
60°
90°
100
90 120°
180°
a
80
a
dc
α = CONDUCTION ANGLE
70
0 1.0
2.0
3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 2. RMS Current Derating
4.0
8.0
a
a
6.0
α = CONDUCTION ANGLE
4.0
α = 30°
60°
120°
90°
180°
dc
2.0
8.0
a
a
6.0
α = CONDUCTION ANGLE
4.0
2.0
α = 180°
120°
dc
30°
60°
90°
00
0 1.0 2.0 3.0 4.0 0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 3. Power Dissipation
1.0 2.0 3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 4. Power Dissipation
4.0
3.0 3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0 2.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.0 1.0
0.7 0.7
0.5 0.5
0.3
–60
–40 –20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate–Trigger Voltage
140
0.3
–60 –40
–20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C)
120 140
Figure 6. Typical Gate–Trigger Current
http://onsemi.com
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