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PDF FOD8321 Data sheet ( Hoja de datos )
| Número de pieza | FOD8321 | |
| Descripción | Gate Drive Optocoupler | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2012
FOD8321
2.5A Output Current, Gate Drive Optocoupler in
Optoplanar® Wide Body SOP 5-Pin
Features
■ Fairchild’s Optoplanar® packaging technology
provides reliable and high voltage insulation with
greater than 8mm creepage and clearance distance,
and 0.5mm internal insulation distance while still
offering a compact footprint
■ 2.5A output current driving capability for medium
power IGBT/MOSFET
– Use of P-Channel MOSFETs at output stage
enables output voltage swing close to the supply
rail
■ 20kV/µs Minimum Common Mode Rejection
■ Wide Supply Voltage range from 15V to 30V
■ Fast Switching Speed over full operating temperature
range
– 500ns max. propagation delay
– 300ns max. pulse width distortion
■ UnderVoltage LockOut (UVLO) with hysteresis
■ Extended industrial temperate range, -40 to 100°C
temperature range
■ Safety and regulatory approvals
– UL1577, 5,000VRMS for 1 min.
– DIN EN/IEC60747-5-5, 1,414V peak working
insulation voltage
Applications
■ AC and brushless DC motor drives
■ Industrial inverter
■ Uninterruptible power supply
■ Induction heating
■ Isolated IGBT/Power MOSFET gate drive
Related Resources
■ FOD3120, High Noise Immunity, 2.5A Output Current,
Gate Drive Optocoupler Datasheet
Description
The FOD8321 is a 2.5A Output Current Gate Drive
Optocoupler, capable of driving medium power IGBT/
MOSFETs. It is ideally suited for fast switching driving of
power IGBT and MOSFETs used in motor control
inverter applications, and high performance power
systems.
It utilizes Fairchild’s coplanar packaging technology,
Optoplanar®, and optimized IC design to achieve reliably
high insulation voltage and high noise immunity.
It consists of a aluminum gallium arsenide (AlGaAs) light
emitting diode optically coupled to an integrated circuit
with a high-speed driver for push-pull MOSFET output
stage. The device is housed in a wide body 5-pin small
outline plastic package.
Functional Schematic
www.DataSheet.net/
ANODE 1
6 VDD
5 VO
CATHODE 3
4 VSS
©2010 Fairchild Semiconductor Corporation
FOD8321 Rev. 1.0.4
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Isolation Characteristics
Apply over all recommended conditions, typical value is measured at TA = 25ºC
Symbol
Parameter
Conditions
Min. Typ. Max. Units
VISO
RISO
CISO
Input-Output Isolation
Voltage
Isolation Resistance
Isolation Capacitance
TA = 25ºC, R.H. < 50%, t = 1.0min,
II-O ≤ 20µA, 50Hz(5)(6)
VI-O = 500V(5)
VI-O = 0V, Freq = 1.0MHz(6)
5,000
1011
1
VRMS
Ω
pF
Notes:
5. Device is considered a two terminal device: Pins 1 and 3 are shorted together and Pins 4, 5 and 6 are shorted
together.
6. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
Electrical Characteristics
Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = Ground, TA = 25°C unless
otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max. Units Figure
VF
Δ(VF / TA)
BVR
CIN
IOH
IOL
VOH
VOL
IDDH
IDDL
IFLH
VFHL
VUVLO+
VUVLO-
UVLOHYS
Input Forward Voltage
IF = 10mA
Temperature Coefficient of
Forward Voltage
Input Reverse Breakdown IR = 10µA
Voltage
Input Capacitance
High Level Output
Current(1)
Low Level Output
Current(1)
High Level Output
Voltage(7)(8)
Low Level Output
Voltage(7)(8)
High Level Supply Current
Low Level Supply Current
Threshold Input Current
Low to High
f = 1MHz, VF = 0V
VOH = VDD – 3V
VOH = VDD – 6V
VOL = VSS + 3V
www.DataSheet.net/
VOL = VSS+ 6V
IF = 10mA, IO = -2.5A
IF = 10mA, IO = -100mA
IF = 10mA, IO = 2.5A
IF = 0mA, IO = 100mA
VO Open, IF = 10 to 16mA
VO Open, VF = 0 to 0.8V
IO = 0mA, VO > 5V
Threshold Input Voltage
High to Low
IO = 0mA, VO < 5V
UnderVoltage Lockout
Threshold
UnderVoltage Lockout
Threshold Hysteresis
IF = 10mA, VO > 5V
IF = 10mA, VO < 5V
1.1 1.5 1.8
-1.8
5
60
1.0 2.0 2.5
2.0 2.5
1.0 2.0 2.5
2.0 2.5
VDD – 6.25
VDD – 0.5
VDD – 2.5
VDD – 0.1
VSS + 2.5
VSS + 0.1
2.9
VSS + 6.25
VSS + 0.5
5
2.8 5
2.4 7.5
0.8
11.5 12.7 14.5
10.0 11.2 13.0
1.5
V
mV/°C
V
pF
A
A
A
A
V
V
V
V
mA
mA
mA
V
V
V
V
16
1, 3
1, 3, 19
4, 6
4, 6, 18
1
1, 2, 20
4
5, 21
7, 8, 22
7, 8, 23
9, 15, 24
25
17, 26
17, 26
Notes:
7. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VDD
as IOH approaches zero amps.
8. Maximum pulse width = 1ms, maximum duty cycle = 20%.
©2010 Fairchild Semiconductor Corporation
FOD8321 Rev. 1.0.4
5
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
Test Circuit (Continued)
1
IF = 10 to 16mA
3
6
0.1μF
5
VO
+
–
VDD = 15 to 30V
100mA
4
Figure 20. VOH Test Circuit
16
0.1μF
5
100mA
VO
+
–
VDD = 15 to 30V
34
www.DataSheet.net/
Figure 21. VOL Test Circuit
©2010 Fairchild Semiconductor Corporation
FOD8321 Rev. 1.0.4
11
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet FOD8321.PDF ] | |
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