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PDF BGX7101 Data sheet ( Hoja de datos )
| Número de pieza | BGX7101 | |
| Descripción | Transmitter IQ modulator | |
| Fabricantes | NXP Semiconductors | |
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3D BGX7101
Transmitter IQ modulator
Rev. 3 — 3 September 2012
Product data sheet
1. General description
The BGX7101 device combines high performance, high linearity I and Q modulation paths
for use in radio frequency up-conversion. It supports RF frequency outputs in the range
from 400 MHz to 4000 MHz. The BGX7101 IQ modulator is performance independent of
the IQ common mode voltage. The modulator provides a typical output power at 1 dB gain
compression (PL(1dB)) value of 12 dBm and a typical 27 dBm output third-order intercept
point (IP3o). Unadjusted sideband suppression and carrier feedthrough are 50 dBc and
45 dBm respectively. A hardware control pin provides a fast power-down/power-up mode
functionality which allows significant power saving.
2. Features and benefits
400 MHz to 4000 MHz frequency operating range
Stable performance across 0.25 V to 3.3 V common-mode voltage input
Independent low-current power-down hardware control pin
12 dBm output 1 dB compression point
27 dBm output third-order intercept point (typical)
Integrated active biasing
Single 5 V supply
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100 differential IQ input impedance
Matched 50 single-ended RF output impedance
ESD protection at all pins
3. Applications
Mobile network infrastructure
Microwave and broadband
RF and IF applications
Industrial applications
4. Device family
The BGX7101 operates in the RF frequency range of 400 MHz to 4000 MHz with
modulation bandwidths up to 650 MHz.
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
NXP Semiconductors
BGX7101
Transmitter IQ modulator
-13.55
S11
(dB)
-13.57
-13.59
aaa-004637
off
-13.61
-13.63
on
on
-13.65
0246
Fig 3. LO input return loss variation (S11_LO)
8 10
t (μs)
9. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC
Pi(lo)
Po(RF)
Tmb
Tj
Tstg
VESD
supply voltage
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local oscillator input power
RF output power
mounting base temperature
junction temperature
storage temperature
electrostatic discharge
voltage
EIA/JESD22-A114 (HBM)
EIA/JESD22-C101
(FCDM)
Min Max Unit
- 5.5 V
- 16 dBm
- 20 dBm
40 +85 C
- +150 C
65 +150 C
2500 +2500 V
650 +650 V
BGX7101
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 September 2012
© NXP B.V. 2012. All rights reserved.
5 of 38
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
NXP Semiconductors
12. Application information
BGX7101
Transmitter IQ modulator
100 nF
VCC
22 pF
modulator in-phase
positive input
modulator in-phase
negative input
24
POFF_P
1
LO input
15
O PRIMARY O
TC1-1-43A+
34
LOGND 2
18 pF LO_P 3
0.3 pF
LO_N 4
18 pF
LOGND
5
LOGND
6
7
23 22
21 20 19 VCC_RF(5V0)
18
VCC
BGX7101
RFGND
17
22 pF
100 nF
0°
90°
89
10
www.DataSheet.net/
16 RFOUT
39 pF
RFOUTPUT
0.4 pF
15 i.c.
14 RFGND
13 i.c.
11 12
modulator quadrature
negative input
modulator quadrature
positive input
Fig 4. Typical wideband application diagram
aaa-002966
Figure 4 shows a typical wideband (from 0.4 GHz to 4 GHz) application circuit. Refer to
the application note for narrowband optimum component values.
12.1 External DAC interfacing
Nominal DAC single-ended output currents are between 0 mA to 20 mA. When driving
into 25 impedance, this creates 250 mV peak-single signal (1 V (p-p) differential). Half
of the impedance is placed at the DAC outputs as 50 load resistors, the other half is
provided by the modulator itself. In this way, the differential filter can be properly
terminated by 100 at both ends.
BGX7101
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 September 2012
© NXP B.V. 2012. All rights reserved.
11 of 38
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet BGX7101.PDF ] | |
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