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PDF UTT12P10 Data sheet ( Hoja de datos )
| Número de pieza | UTT12P10 | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
UTT12P10
Preliminary
100V, 12A P-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UTT12P10 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed, cost-effectiveness and a minimum on-state resistance. It can
also withstand high energy in the avalanche.
FEATURES
* RDS(ON)<0.29Ω @ VGS=-10V, ID=-12A
* High Switching Speed
SYMBOL
2.Drain
1
TO-252
1.Gate
3.Source
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ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT12P10L-TN3-R
UTT12P10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-722.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
UTT12P10
Preliminary
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
(Note 1)
Driver Gate Drive
P.W.
Period
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D=
P.W.
Period
VGS=10V *
(Note 2)
Reverse
Recovery
Current
(Note 3)
Re-Applied
Voltage
D.U.T. ISD Waveform
Body Diode Forward Current
D.U.T. VDS Waveform
Diode di/dt
Recovery
dv/dt
Body Diode
Inductor Curent
Forward Drop
Ripple≤5
%
*** VGS=5V for Logic Level and 3V Drive Devices
For N and P Channel Power MOSFET
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-19A. (See Figure 2)
3. ISD≤-19A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VDD
ISD
5 of 6
QW-R502-722.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet UTT12P10.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UTT12P10 | P-CHANNEL POWER MOSFET | Unisonic Technologies |
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