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PDF 2N6029 Data sheet ( Hoja de datos )
| Número de pieza | 2N6029 | |
| Descripción | COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor Corp | |
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2N5629 2N5630 NPN
2N6029 2N6030 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5629, 2N6029
series devices are complementary silicon power
transistors, manufactured by the epitaxial base
process, designed for high voltage and high power
amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N5629
2N6029
100
2N5630
2N6030
120
100 120
7.0
16
20
5.0
200
-65 to +200
0.875
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEX
VCE=Rated VCEO, VEB=1.5V
ICEX
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=7.0V
BVCEO
IC=200mA (2N5629, 2N6029)
100
BVCEO
IC=200mA (2N5630, 2N6030)
120
VCE(SAT) IC=10A, IB=1.0A
VCE(SAT) IC=16A, IB=4.0A
VBE(SAT) IC=10A, IB=1.0A
VBE(ON)
VCE=2.0V, IC=8.0A
hFE
VCE=2.0V, IC=8.0A (2N5629, 2N6029)
25
hFE
VCE=2.0V, IC=8.0A (2N5630, 2N6030)
20
hFE VCE=2.0V, IC=16A
4.0
hfe VCE=10V, IC=4.0A, f=1.0kHz
15
fT VCE=20V, IC=1.0A, f=500kHz
1.0
Cob VCB=10V, IE=0, f=100kHz (NPN)
Cob VCB=10V, IE=0, f=100kHz (PNP)
MAX
1.0
1.0
5.0
1.0
1.0
1.0
2.0
1.8
1.5
100
80
500
1.0
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
pF
nF
R1 (19-March 2014)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6029.PDF ] | |
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