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Número de pieza | KF60N06P | |
Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | KEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KF60N06P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology,
DC/DC Converters and switching mode power supplies.
FEATURES
VDSS = 60V, ID = 60A
Drain-Source ON Resistance :
RDS(ON) =13.2m (Max.) @VGS = 10V
Qg(typ.) = 48nC
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60 V
20 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID*
IDP
EAS
EAR
dv/dt
PD
60
37
230
430
13.5
4.5
113
0.90
A
mJ
www.DataSheet.net/
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
RthJC
RthJA
1.1
62.5
/W
/W
* : Drain current limited by maximum junction temperature.
KF60N06P
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
PIN CONNECTION
D
G
2009. 12.21
S
Revision No : 0
1/6
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page KF60N06P
Fig12. Gate Charge
Fast
Recovery
ID Diode
0.8 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs
Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
30V
25Ω
10 V
VGS
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
BVDSS
L
IAS
www.DataSheet.net/
VDS
VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
2009. 12.21
Revision No : 0
5/6
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet KF60N06P.PDF ] |
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KF60N06P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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