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PDF RD02MUS1B Data sheet ( Hoja de datos )

Número de pieza RD02MUS1B
Descripción Silicon MOSFET Power Transistor
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo



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< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
OUTLINE DRAWING
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
6.0+/-0.15
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
INDEX MARK
(Gate)
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0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




RD02MUS1B pdf
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TEST CIRCUIT(f=175MHz)
5mm
3mm
RF-in
62pF
Vgg
C1
19mm
4.7K ohm
3.3mm L1 6.5mm
12mm
39pF
680 ohm
240pF
L1:Enameled wire 5 Turns,D:0.43mm,2.46mmm O.D
L2:Enameled wire 3 Turns,D:0.43mm,2.46mmm O.D
L3:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
15mm
Vdd
C2
10μF,50V
3mm
3mm
10pF
11.5mm
10pF
L3
5mm L2 13.5mm
43pF
12mm
5mm
62pF RF-OUT
RD02MUS1B
175MHz
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
TEST CIRCUIT(f=520MHz)
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Vgg
C1
19mm
Vdd
19mm
C2
10μF,50V
4.7K ohm
RF-in
26.5m
m
62pF
20mm
6pF
2mm
10mm
43pF 680 ohm
240pF
3mm
11mm
RD02MUS1B
520MHz
L1
4.5m
m
18pF
40.5mm RF-OUT
62pF
L1:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
Publication Date : Oct.2011
5
Datasheet pdf - http://www.DataSheet4U.co.kr/

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