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PDF RD01MUS2B Data sheet ( Hoja de datos )

Número de pieza RD01MUS2B
Descripción Silicon MOSFET Power Transistor
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo



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No Preview Available ! RD01MUS2B Hoja de datos, Descripción, Manual

< Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
DESCRIPTION
RD01MUS2B is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from
gate to source for ESD protection.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
0.1
φ
1.5+/-0.1
LOT No.
FEATURES
•High power gain and High Efficiency.
Pout 1.6W Typ, Gp 15dBTyp, 70%Typ
@Vdd=7.2V,f=527MHz
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANCE
RD01MUS2B-101,T113 is a RoHS compliant products.
www.DataSheet.net/
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V
25 V
VGSS Gate to source voltage Vds=0V
-5/+10
V
Pch Channel dissipation Tc=25°C
3.6 W
Pin Input Power
Zg=Zl=50
100 mW
ID Drain Current
- 600 mA
Tch Channel Temperature
- 150 °C
Tstg Storage temperature
- -40 to +125 °C
Rth j-c Thermal resistance
Junction to case
Note: Above parameters are guaranteed independently.
34.5
°C/W
D
G
S
SCHEMATIC DRAWING
Publication Date : Nov.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 page




RD01MUS2B pdf
< Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
EQUIVALENT CIRCUITRY for Test Circuit (f=527MHz)
www.DataSheet.net/
C1
1000 pF
Chip Ceramic Capacitiors
C2
10 pF
Chip Ceramic Capacitiors
C3
33 pF
Chip Ceramic Capacitiors
C4
22 pF
Chip Ceramic Capacitiors
C5
12 pF
Chip Ceramic Capacitiors
C6
3 pF
Chip Ceramic Capacitiors
C7
1000 pF
Chip Ceramic Capacitiors
C8 0.022 μF Chip Ceramic Capacitiors
C9
1000 pF
Chip Ceramic Capacitiors
C10
82 pF
Chip Ceramic Capacitiors
C11 82 pF
C12 0.022 μF
Chip Ceramic Capacitiors
Chip Ceramic Capacitiors
C13 1000 pF Chip Ceramic Capacitiors
C14
22 μF
Electrolytic Capacitior
R1
4.7K ohm
Chip Resistors
R2
100 ohm
Chip Resistors
R3
0 ohm
Chip Resistors
L1
8 nH
Enameled wire 2Turns, D:0.23mm, Inside: 1.1mm
L2
8 nH
Enameled wire 2Turns, D:0.23mm, Inside: 1.1mm
L3
12 nH
Enameled wire 3Turns, D:0.23mm, Inside: 1.1mm
L4
12 nH
Enameled wire 3Turns, D:0.23mm, Inside: 1.1mm
L5
29 nH
Enameled wire 6Turns, D:0.40mm, Inside: 1.6mm
* Inductor of Rolling Coil measurement condition : f=100MHz
Publication Date : Nov.2011
5
Datasheet pdf - http://www.DataSheet4U.co.kr/

5 Page





RD01MUS2B arduino
< Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
EQUIVALENT CIRCUITRY for 900MHz EVALUATION BOARD (f=890 – 941MHz)
C1
150 pF
Chip Ceramic Capacitiors
C2
4 pF
Chip Ceramic Capacitiors
C3
4 pF
Chip Ceramic Capacitiorswww.DataSheet.net/
C4
30 pF
Chip Ceramic Capacitiors
C5
10 pF
Chip Ceramic Capacitiors
C6
10 pF
Chip Ceramic Capacitiors
C7
10 pF
Chip Ceramic Capacitiors
C8
10 pF
Chip Ceramic Capacitiors
C9
8 pF
Chip Ceramic Capacitiors
C10
2 pF
Chip Ceramic Capacitiors
C11
150 pF
Chip Ceramic Capacitiors
C12
100 pF
Chip Ceramic Capacitiors
C13
1000 pF
Chip Ceramic Capacitiors
C14
100 pF
Chip Ceramic Capacitiors
C15
C16
1000 pF
22 μF
Chip Ceramic Capacitiors
Electrolytic Capacitior
R1
18 ohm
Chip Resistors
R2
4.7K ohm
Chip Resistors
R3
0 ohm
Chip Resistors
L1
37 nH
Enameled wire 7Turns, D:0.40mm, Inside: 1.6mm
*Inductor of Rolling Coil measurement condition : f=100MHz
For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-900-046”
Publication Date : Nov.2011
11
Datasheet pdf - http://www.DataSheet4U.co.kr/

11 Page







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