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PDF 2N2907AHR Data sheet ( Hoja de datos )

Número de pieza 2N2907AHR
Descripción Hi-Rel PNP bipolar transistor
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! 2N2907AHR Hoja de datos, Descripción, Manual

2N2907AHR
Hi-Rel 60 V, 0.6 A PNP transistor
1
2
3
TO-18
33
2
LCC-3
1
4
1
2
UB
Pin 4 in UB is connected to the metallic lid.
Figure 1. Internal schematic diagram
Features
Datasheet - production data
Parameter
BVCEO
IC (max)
HFE at 10 V - 150 mA
Value
60 V
0.6 A
> 100
Hermetic packages
ESCC and JANS qualified
European preferred part list EPPL
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
Table 1. Device summary
Device
Qualification Agency
system specification
Package
Radiation level
JANSR2N2907AUBx
JANSR
MIL-PRF-
19500/291
UB
100 krad - high and low
dose rate
JANS2N2907AUBx
JANS
MIL-PRF-
19500/291
UB
-
2N2907ARUBx
ESCC Flight 5202/001
UB 100 krad - low dose rate
2N2907AUBx
ESCC Flight 5202/001
UB
-
SOC2907ARHRx ESCC Flight 5202/001
LCC-3
100 krad - low dose rate
SOC2907AHRx
ESCC Flight 5202/001
LCC-3
-
2N2907ARHRx
ESCC Flight 5202/001
TO-18
100 krad - low dose rate
2N2907AHRx
ESCC Flight 5202/001
TO-18
-
EPPL
-
-
Target
Target
Yes
Yes
-
-
December 2015
This is information on a product in full production.
DocID15382 Rev 10
1/22
www.st.com

1 page




2N2907AHR pdf
2N2907AHR
Electrical characteristics
Table 4. JANS electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Cobo
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz f 1 MHz
Cibo
Output capacitance
(IE = 0)
VEB = 2 V
100 kHz f 1 MHz
ton Turn-on time
VCC = 30 V, IC = 150 mA
IB1 = 15 mA
toff Turn-off time
VCC = 30 V, IC = 150 mA
IB1 = -IB2 = 15 mA
1. Pulsed duration = 300 µs, duty cycle 2%
- 8 pF
- 30 pF
- 45 ns
- 300 ns
2.2
ESCC electrical characteristics
Table 5. ESCC electrical characteristics
Symbol
Parameter
Test conditions
Min.
ICBO
Collector cut-off
current (IE = 0)
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
VBE(sat) (1)
Base-emitter
saturation voltage
hFE (1) DC current gain
hfe
Cobo
Small signal current
gain
Output capacitance
(IE = 0)
VCB = 50 V,
VCB = 50 V, Tamb = 150 °C
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 150 mA, IB = 15 mA
IC = 150 mA, IB = 15 mA
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
VCE = 20 V, IC = 20 mA
f = 100 MHz
VCB = 10 V
100 kHz f 1 MHz
60
60
5
75
100
100
50
2
Typ.
0.87
Max.
10
10
0.4
1.3
300
8
Unit
nA
µA
V
V
V
V
V
pF
DocID15382 Rev 10
5/22
22

5 Page





2N2907AHR arduino
2N2907AHR
Radiation hardness assurance
Table 8. ESCC 5202/001R post radiation electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off
current (IE = 0)
IEBO
Emitter cut-off current
(IC = 0)
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
Collector-emitter
V(BR)CEO(1) breakdown voltage
(IB = 0)
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
VCB = 50 V
VEB = 3 V
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 150 mA
IB = 15 mA
- 10 nA
- 10 nA
60 -
V
60 -
V
V
5-
V
- 0.4 V
VBE(sat) (1)
Base-emitter
saturation voltage
IC = 150 mA IB = 15 mA
- 1.3 V
[hFE] (1)
Post irradiation gain
calculation (2)
IC = 0.1 mA
IC = 10 mA
IC = 150 mA
IC = 500 mA
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
[37.5]
[50]
[100]
[25]
-
300
1. Pulsed duration = 300 µs, duty cycle 2%
2.
The post-irradiation gain calculation
completion of irradiation testing and
aoffte[hrFeEa],cmh aadneneuasliinngg
hsFteEpmifeaansyu,rsehmaellnbtse
from prior to
as specified
and on
in MILSTD-750
method 1019.
DocID15382 Rev 10
11/22
22

11 Page







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