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PDF IHW40N120R3 Data sheet ( Hoja de datos )
| Número de pieza | IHW40N120R3 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IHW40N120R3 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW40N120R3
Datasheet
IndustrialPowerControl
1 page  
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.20mA
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=1.00mA,VCE=VGE
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=40.0A
IHW40N120R3
min.
Value
typ.
max. Unit
1200 -
-V
-
-
1.55 1.75
1.80 -
V
- 1.90 -
-
-
1.60 1.80
1.70 -
V
- 1.80 -
5.1 5.8 6.4 V
- - 100.0 µA
- - 2500.0
- - 100 nA
- 35.3 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=960V,IC=40.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 2708 -
- 87 - pF
- 76 -
- 335.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Turn-off energy, soft switching
Eoff
Tvj=25°C,
VCC=600V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=7.5Ω,RG(off)=7.5Ω,
Lσ=220nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
dv/dt=150.0V/µs
Value
min. typ. max. Unit
- 336 - ns
- 38 - ns
- 2.02 - mJ
- 0.48 - mJ
5 Rev.2.2,2015-01-26
5 Page 
ResonantSwitchingSeries
IHW40N120R3
16
240V
960V
14
1E+4
Cies
Coes
Cres
12
1000
10
8
6
100
4
2
0
0 50 100 150 200 250 300 350 400
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=40A)
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11
D=0.5
D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse
single pulse
0.01 0.01
0.001
1E-6
i: 1 2 3
45
ri[K/W]: 0.060632 0.080405 0.18889 0.015093 2.0E-3
τi[s]: 2.9E-4 2.2E-3 0.01389068 0.1188353 1.860864
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 19. IGBTtransientthermalresistance
(D=tp/T)
0.001
1E-6
i: 1 2 3
45
ri[K/W]: 0.060632 0.080405 0.18889 0.015093 2.0E-3
τi[s]: 2.9E-4 2.2E-3 0.01389068 0.1188353 1.860864
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
11 Rev.2.2,2015-01-26
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IHW40N120R3.PDF ] | |
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