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PDF SDP06S60 Data sheet ( Hoja de datos )
| Número de pieza | SDP06S60 | |
| Descripción | Silicon Carbide Schottky Diode | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SDP06S60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 1200W1)
• No forward recovery
SDP06S60
SDT06S60
thinQ!¥ SiC Schottky Diode
Product Summary
VRRM
600
Qc 21
IF 6
V
nC
A
PG-TO220-2-2.
P-TO220
Type
SDP06S60
SDT06S60
Package
P-TO220-3
PG-TO220-2-2.
Ordering Code
Q67040-S4371
www.DataSheet.net/
Q67040-S4446
Marking
D06S60
D06S60
Pin 1
n.c.
C
Pin 2
C
A
Pin 3
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
IFRM
IFMAX
³i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Rev. 2.4
Page 1
Value
6
8.4
21.5
Unit
A
28
60
2.3
600
600
57.6
-55... +175
A²s
V
W
°C
2008-06-02
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
5 Typ. reverse current vs. reverse voltage
IR=f(VR)
10 2
µA
SDP06S60
SDT06S60
6 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SDP06S60
K/W
10 1 150°C
125°C
100°C
25°C
10 0
10 0
10 -1
10 -1
10 -2
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
100 150 200 250 300 350 400 450 500 V 600
VR
7 Typ. capacitance vs. reverse voltage
C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
250
pF
150
www.DataSheet.net/
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
8 Typ. C stored energy
EC=f(VR)
s 10 0
tp
3.5
µJ
2.5
2
1.5
100
1
50
0.5
010 0
Rev. 2.4
10 1
10 2 V 10 3
VR
Page 5
00 100 200 300 400 V 600
VR
2008-06-02
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SDP06S60.PDF ] | |
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