(PDF) 2N5796U Datasheet - PNP DUAL SILICON TRANSISTOR

Número de pieza	2N5796U
Descripción	PNP DUAL SILICON TRANSISTOR
Fabricantes	Microsemi Corporation
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No Preview Available ! PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices 2N5795 2N5796 2N5796U TECHNICAL DATA Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA ≥ +250C 2) Derate linearly 3.43 mW/0C for TA ≥ +250C PT TJ, Tstg Value 60 60 5.0 600 One(1) Both(2) Section Sections 0.5 0.6 -65 to +175 Units Vdc Vdc Vdc mAdc W 0C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current V(BR)CEO VCB = 50 Vdc VCBO = 60 Vdc Emitter-Base Cutoff Current ICBO VEB = 3.0 Vdc VEB = 5.0 Vdc IEBO Min. 60 TO-78* 6 PIN SURFACE MOUNT* *See MILPRF19500/496 for package outline Max. Unit Vdc 10 ηAdc 10 µAdc 100 ηAdc 10 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 1 of 2 1 page

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PDF 2N5796U Data sheet ( Hoja de datos )