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PDF DMN1019UFDE Data sheet ( Hoja de datos )
| Número de pieza | DMN1019UFDE | |
| Descripción | 12V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Green
DMN1019UFDE
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
12V
RDS(ON) max
10mΩ @ VGS = 4.5V
12mΩ @ VGS = 2.5V
14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V
Package
U-DFN2020-6
Type E
ID max
TA = +25°C
11A
10
9A
8A
5A
Features
• 0.6mm profile – ideal for low profile applications
• PCB footprint of 4mm2
• Low Gate Threshold Voltage
• Fast Switching Speed
• ESD Protected Gate
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Load Switching
• Battery Management Application
• Power Management Functions
Pin1
U-DFN2020-6
Type E
Mechanical Data
• Case: U-DFN2020-6 Type E
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
• Weight: 0.007 grams (approximate)
Drain
ESD PROTECTED
Bottom View
www.DataSheet.net/
Pin Out
Bottom View
Gate
Gate
Protection Source
Diode
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN1019UFDE-7
Marking
N7
Reel size (inches)
7
Quantity per reel
3,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
N7
2012
Z
Mar
3
2013
A
Apr May
45
N7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN1019UFDE
Datasheet number: DS35561 Rev. 4 - 2
1 of 7
www.diodes.com
July 2012
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
DMN1019UFDE
0.020
1.2
0.016
0.012
0.008
0.004
VGS = 4.5V
ID = 5A
VGS = 10V
ID = 10A
1.0
0.8
0.6
0.4
0.2
ID = 1mA
ID = 250µA
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
30
25
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
20
15 TA = 25°C
10
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig.12 Diode Forward Voltage vs. Current
8
www.DataSheet.net/
1,000
Ciss
Coss
Crss
100
0
2 4 6 8 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
12
6
VDS = -4V
ID = -10A
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate Charge
DMN1019UFDE
Datasheet number: DS35561 Rev. 4 - 2
5 of 7
www.diodes.com
July 2012
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
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