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PDF IRG7SC12FPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7SC12FPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 96363
IRG7SC12FPbF
Features
• Low VCE (ON) Trench IGBT Technology
• Maximum Junction temperature 150 °C
• 3 μS short circuit SOA
• Square RBSOA
• Positive VCE (ON) Temperature co-efficient
• Tight parameter distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC = 8A, TC = 100°C
tSC ≥ 3μs, TJ(max) = 150°C
VCE(on) typ. = 1.60V
Benefits
• High Efficiency in a HVAC, Refrigerator applications
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
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G
Gate
C
E
G
D2Pak
IRG7SC12FPbF
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Pulse Collector Current
cClamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
eThermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
24
13
8
24
32
± 30
69
28
-55 to +150
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
Typ.
–––
0.50
40
Max.
1.8
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
03/25/11
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
1000
tdOFF
100 tF
tdON
tR
10
0 4 8 12 16 20
IC (A)
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 400V, RG = 47Ω; VGE = 15V
1000
tdOFF
tF
tdON
100
tR
10
0
50 100 150 200 250
RG (Ω)
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L = 1mH; VCE = 400V, ICE = 8A; VGE = 15V
10000
1000
Cies
100
Coes
10 Cres
1
0 100 200 300 400
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
500
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IRG7SC12FPbF
1000
900
EON
800
EOFF
700
600
500
400
300
0
50 100 150 200 250
Rg (Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1.0mH; VCE = 400V, ICE = 8A; VGE = 15V
13 110
Tsc
11 Isc 90
9 70
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7
5
50
30
3 10
8 10 12 14 16 18
VGE (V)
Fig. 16 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
18
16 VCES = 400V
VCES = 300V
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30 35
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 8A; L = 2.4mH
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG7SC12FPBF.PDF ] | |
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