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PDF 2N5638 Data sheet ( Hoja de datos )
| Número de pieza | 2N5638 | |
| Descripción | N-Channel Switch | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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2N5638
N-Channel Switch
• This device is designed for low level analog switchng, sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 51.
1 TO-92
Absolute Maximum Ratings * TC=25°C unless otherwise noted
1. Drain 2. Source 3. Gate
Symbol
Parameter
Value
Units
VDG Drain-Gate Voltage
30
VGS Gate-Source Voltage
-30
IGF Forward Gate Current
50
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
ID(off)
Drain Cutoff Leakage Current
On Characteristics
VDS = 0, IG = -10µA
VGS = -15V, VDS = 0
VDS = 12V, VGS = 15V
-30 V
-1.0 nA
1.0 nA
IDSS
Zero-Gate Voltage Drain Current *
rDS(on)
Drain-Source On Resistance
Small Signal Characteristics
VDS = 20V, IGS = 0
VGS = 0V, ID = 1.0mA
50 mA
30 Ω
rds(on)
Drain-Source On Resistance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = VGS = 0, f = 1.0kHz
VDS = 0, VGS = 12V, f = 1.0MHz
VDS = 0V, VGS = 12V, f = 1.0MHz
30 Ω
10 pF
4.0 pF
td(on)
Trun On Delay Time
tr Rise Time
td(off)
Trun Off Delay Time
tf Fall Time
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
VDD = 10V, VGS(on) = 0
VGS(off) = -12, ID(on) = 12mA
RG = 50Ω
4.0 ns
5.0 ns
5.0 ns
10 ns
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5638.PDF ] | |
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