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PDF 2N5566 Data sheet ( Hoja de datos )
| Número de pieza | 2N5566 | |
| Descripción | Matched N-Channel JFET Pairs | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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2N5564/5565/5566
Vishay Siliconix
Matched N-Channel JFET Pairs
PRODUCT SUMMARY
Part Number
2N5564
2N5565
2N5566
VGS(off) (V)
–0.5 to –3
–0.5 to –3
–0.5 to –3
V(BR)GSS Min (V)
–40
–40
–40
gfs Min (mS)
7.5
7.5
7.5
IG Typ (pA)
–3
–3
–3
jVGS1 – VGS2j Max (mV)
5
10
20
FEATURES
D Two-Chip Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise: 12 nV⁄√Hz @ 10 Hz
D Good CMRR: 76 dB
D Minimum Parasitics
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
D Maximum High Frequency Performance
APPLICATIONS
D Wideband Differential Amps
D High-Speed,
Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
D Matched Switches
DESCRIPTION
The 2N5564/5565/5566 are matched pairs of JFETs mounted
in a TO-71 package. This two-chip design reduces parasitics
for good performance at high frequency while ensuring
extremely tight matching. This series features high
breakdown voltage (V(BR)DSS typically > 55 V), high gain
(typically > 9 mS), and <5 mV offset between the two die.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information).
For similar products see the low-noise U/SST401 series, and
the low-leakage 2N5196/5197/5198/5199 data sheets.
TO-71
S1
1
D1 2
G2
6
5 D2
3
G1
4
Top View
S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Document Number: 70254
S-04031—Rev. D, 04-Jun-01
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 325 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
Notes
a. Derate 2.6 mW/_C above 25_C
b. Derate 5.2 mW/_C above 25_C
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8-1
1 page  
2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Forward Admittance
100
VDG = 15 V
ID = 10 mA
TA = 25_C
–gfg
bfg
10
gfg
Common-Gate Reverse Admittance
10
VDG = 15 V
ID = 10 mA
TA = 25_C
1 –brg
–grg
+grg
1 0.1
0.1
100
200 500
f – Frequency (MHz)
1000
Common-Gate Output Admittance
100
VDG = 15 V
ID = 10 mA
TA = 25_C
bog
10
gog
1
0.1
100
200 500
f – Frequency (MHz)
1000
1000
Output Conductance vs. Drain Current
VGS(off) = –2 V
VDS = 15 V
f = 1 kHz
TA = –55_C
100
25_C
125_C
10
0.1
1.0
ID – Drain Current (mA)
Document Number: 70254
S-04031—Rev. D, 04-Jun-01
10
0.01
100
200 500
f – Frequency (MHz)
Noise Voltage vs. Frequency
100
VDS = 15 V
1000
10
ID = 1 mA
ID = 10 mA
1
10
100 1 k 10 k
f – Frequency (Hz)
100 k
Transconductance vs. Drain Current
100
VGS(off) = –2 V
VDS = 15 V
f = 1 kHz
25_C
TA = –55_C
10
125_C
1
0.1
1.0
ID – Drain Current (mA)
10
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8-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N5566.PDF ] | |
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