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PDF 2N5555 Data sheet ( Hoja de datos )

Número de pieza 2N5555
Descripción CASE 29.04/ STYLE 5 TO-92 (TO-226AA)
Fabricantes Motorola Inc 
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No Preview Available ! 2N5555 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET Switching
N–Channel — Depletion
3
GATE
1 DRAIN
Order this document
by 2N5555/D
2N5555
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDS
VDG
VGS
IGF
PD
25 Vdc
25 Vdc
25 Vdc
10 mAdc
350 mW
2.8 mW/°C
Junction Temperature Range
TJ – 65 to +150
Storage Temperature Range
Tstg – 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C
°C
Symbol
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V, TA = 100°C)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
V(BR)GSS
IGSS
ID(off)
IDSS
VGS(f)
VDS(on)
rDS(on)
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
rds(on)
Ciss
Crss
Turn–On Delay Time
Rise Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
td(on)
tr
td(off)
tf
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min Max Unit
25 — Vdc
— 1.0 nAdc
— 10 nAdc
— 2.0 µAdc
15 — mAdc
— 1.0 Vdc
— 1.5 Vdc
— 150 Ohms
— 150 Ohms
— 5.0 pF
— 1.2 pF
— 5.0 ns
— 5.0 ns
— 15 ns
— 10 ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

1 page




2N5555 pdf
2N5555
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20° 10°
0° 350° 340°
330°
40° 1.0 100 ID = 0.25 IDSS 320°
100 200
200 300
0.9
50° 400 310°
300
60°
0.8
ID = IDSS
400
500
300°
600
70° 0.7 500 290°
600 700
80° 0.6 700 800 280°
90°
800
900
900
270°
100° 260°
30°
20° 10°
0° 350° 340°
330°
40° 0.4 320°
50° ID = IDSS, 0.25 IDSS
900
800
60° 600 700
70° 500
400
80° 300
200
90° 100
100°
0.3
0.2
0.1
0.0
310°
300°
290°
280°
270°
260°
110° 250° 110° 250°
120° 240° 120° 240°
130° 230° 130° 230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 11. S11s
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 12. S12s
30°
20° 10°
0° 350° 340°
330°
40° 320°
0.6
50°
0.5
60°
70° 900
800
900
0.4
80° 700 800
0.3
90° 600 700 ID = 0.25 IDSS
600
100° 500
500
0.3
400 100
110° 400
300 200 0.4
300
120°
ID = IDSS
200 100 0.5
130°
0.6
310°
300°
290°
280°
270°
260°
250°
240°
230°
30°
20° 10°
0° 350° 340°
330°
40°
100
1.0
200
100 200
300
ID
400
500
=
0.25
IDSS
320°
300
400
0.9 500
600
700
50°
ID = IDSS
0.8
600 800
700
800 900 900
310°
60° 300°
70° 0.7 290°
80° 280°
0.6
90° 270°
100° 260°
110° 250°
120° 240°
130° 230°
140° 220°
150° 160° 170° 180° 190° 200° 210°
Figure 13. S21s
140°
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150° 160° 170° 180° 190° 200° 210°
Figure 14. S22s
220°
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