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PDF 2N5398 Data sheet ( Hoja de datos )
| Número de pieza | 2N5398 | |
| Descripción | N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | ETC | |
| Logotipo |  |
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B-20
2N5397, 2N5398
N-Channel Silicon Junction Field-Effect Transistor
01/99
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Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Drain Source Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
25 V
10 mA
300 mW
1.7 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Source Forward Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
V(BR)GSS
VGS(F)
IGSS
VGS(OFF)
IDSS
2N5397 2N5398
Min Max Min Max Unit
– 25 – 25
11
– 0.1 – 0.1
– 0.1 – 0.1
–1 –6 –1 –6
10 30 5 40
V
V
nA
µA
V
mA
Process NJ26L
Test Conditions
IG = – 1 µA, VDS = ØV
IG = 1 mA, VDS = ØV
VGS = – 15V, VDS = ØV
VGS = – 15V, VDS = ØV
VDS = 10V, ID = 1 nA
VDS = 10V, VGS = ØV
gfs 5.5 9 5 10 mS VDG = 10V, ID = 10 mA
Common Source
Forward Transfer Admittance
Common Source Output Conductance
Common Source Input Admittance
Common Source Input Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
| Yfs |
| gos |
| Yos |
gis
Ciss
Crss
6 10 5.5 10 mS
0.4 0.5 mS
0.2 0.4 mS
2 3 mS
5 5.5 pF
1.2 1.3 pF
VDS = 10V, ID = 10 mA
VDG = 10V, ID = 10 mA
VDS = 10V, ID = 10 mA
VDG = 10V, ID = 10 mA
VDG = 15V, VGS = ØV
VDG = 15V, VGS = ØV
TA = 150°C
f = 450 MHz
f = 1 kHz
f = 450 MHz
f = 1 kHz
f = 450 MHz
f = 1 kHz
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP5397, SMP5398
www.interfet.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N5398.PDF ] | |
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