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BP3102
High Precision PSR Constant Current LED Driver
Description
The BP3102 is a high precision primary-side feedback
and regulation controller for LED lighting, it operates
in constant current control mode and is designed to
work in inductor current discontinuous conduction
mode and extremely suitable for flyback convertor
under universal input, the output power of system
should be less than 5W.
The BP3102 integrates 600V power MOSFET. Since
adopting primary sense and feedback control
technology, the secondary sense and feedback circuit
is eliminated. The loop compensation components are
also removed while maintaining stability overall
operating conditions. The low component counts and
low BOM cost are realized.
Since using the proprietary high accurate current sense
method, the BP3102 realizes ±3% accuracy of LED
current along with excellent line regulation and load
regulation.
The BP3102 offers rich protection functions including
LED short circuit protection, LED open circuit
protection, die over-temperature protection, VCC over
voltage protection, VCC under voltage protection and
FB short circuit protection. All the protection features
are auto-recovery.
Typical Application
Features
Built-in 600V Power MOSFET
Constant current control without secondary sense
and feedback circuit.
±3% LED current accuracy
Ultra low operating current to improve efficiency
High resistance feedback resistor to improve
efficiency
Universal input voltage
LED short and open circuit protection
VCC under-voltage protection
Feedback loop short circuit protection
Current sense resistor open circuit protection
Over temperature protection
No external loop compensation component
required
Available in SOP-8 package
Applications
GU10/E27 LED bulb, spot light
Other LED lighting
www.DataSheet.net/
BP3102_DS_Rev.1.0
Figure 1. Typical application circuit for BP3102
www.bpsemi.com
Bright Power Semiconductor Co. Confidential – Customer Use Only
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
BP3102
High Precision PSR Constant Current LED Driver
Symbol
Parameter
Conditions
Min. Typ. Max. Units
MOSFET Section
RDS_ON
BVDSS
Static drain-source
on-resistance
Drain-source breakdown
voltage
VGS=10V/IDS=0.5A
VGS=0V/IDS=250uA
600
13
Ω
V
IDSS
Drain-source leakage
current
VGS=0V/VDS=600V
200 nA
Note 4 : production testing of the chip is performed at 25°C.
Note 5: the maximum and minimum parameters specified are guaranteed by test, the typical value are guaranteed by design, characterization and statistical
analysis
Note 6: refer to application information
Typical Performance Characteristics
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Turn on threshold VS. Temperature
Turn off threshold VS. Temperature
BP3102_DS_Rev.1.0
www.bpsemi.com
Bright Power Semiconductor Co. Confidential – Customer Use Only
5
Datasheet pdf - http://www.DataSheet4U.co.kr/