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PDF RJH60F6BDPQ-A0 Data sheet ( Hoja de datos )
| Número de pieza | RJH60F6BDPQ-A0 | |
| Descripción | High Speed Power Switching | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RJH60F6BDPQ-A0 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Preliminary Datasheet
RJH60F6BDPQ-A0
600V - 45A - IGBT
High Speed Power Switching
R07DS0632EJ0100
Rev.1.00
Feb 17, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
123
Absolute Maximum Ratings
www.DataSheet.net/
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-cd
Tj
Tstg
1. Gate
2. Collector
3. Emitter
4. Collector
E
Ratings
600
±30
85
45
170
100
297.6
0.42
1.1
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 1 of 8
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RJH60F6BDPQ-A0
Switching Characteristics (Typical) (1)
1000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
tf
td(off)
100
td(on)
tr
tr includes the diode recovery
10
1 10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
VCC = 400 V, VGE = 15 V
IC = 30 A, Ta = 150 °C
td(off)
100 tf
tr
td(on)
tr includes the diode recovery
10
1 10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
td(off) tr
100
tf
td(on)
tr includes the diode recovery
10
25 50 75 100 125
150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 25°C
1000
Eoff
100 Eon
Eon includes the diode recovery
10
1 10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
VCC = 400 V, VGE = 15 V
IC = 30 A, Ta = 150 °C
1000
Eoff
Eon
www.DataSheet.net/
Eon includes the diode recovery
100
1 10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10000
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
1000
Eon
Eoff
Eon includes the diode recovery
100
25 50 75 100 125
150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 5 of 8
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RJH60F6BDPQ-A0.PDF ] | |
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