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PDF RJH60D5DPQ-A0 Data sheet ( Hoja de datos )

Número de pieza RJH60D5DPQ-A0
Descripción IGBT
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJH60D5DPQ-A0 Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJH60D5DPQ-A0
600 V - 37 A - IGBT
Application: Inverter
R07DS0527EJ0100
Rev.1.00
Aug 26, 2011
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
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E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
75
37
150
30
120
200
0.63
2.1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0527EJ0100 Rev.1.00
Aug 26, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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RJH60D5DPQ-A0 pdf
RJH60D5DPQ-A0
Switching Characteristics (Typical) (1)
1000
100 td(off)
tf
td(on)
10 tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
1
1 10
100 200
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 37 A, Ta = 25°C
td(off)
100
td(on)
tf
tr
10
2
5 10 20
50
Gate Registance Rg (Ω)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
10000
1000
100
10
1
Eoff
Eon
10 100 200
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
VCC = 300 V, VGE = 15 V
IC = 37 A, Ta = 25°C
1000
Eon
Eoff
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100
2
5 10 20
50
Gate Registance Rg (Ω)
(Inductive load)
R07DS0527EJ0100 Rev.1.00
Aug 26, 2011
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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