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PDF RJH60D0DPQ-A0 Data sheet ( Hoja de datos )

Número de pieza RJH60D0DPQ-A0
Descripción IGBT
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJH60D0DPQ-A0 Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJH60D0DPQ-A0
600 V - 22 A - IGBT
Application: Inverter
R07DS0526EJ0100
Rev.1.00
Aug 26, 2011
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
45
22
90
22
90
140
0.89
2.3
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0526EJ0100 Rev.1.00
Aug 26, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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RJH60D0DPQ-A0 pdf
RJH60D0DPQ-A0
Switching Characteristics (Typical) (1)
1000
100 td(off)
tf
td(on)
10 tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
1
1 10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25°C
100 td(off)
tf
td(on)
tr
10
2
5 10 20
50
Gate Registance Rg (Ω)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
1000
100
Eoff
Eon
10
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
1
1 10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
1000
Eoff
Eon
100
www.DataSheet.net/
VCC = 300 V, VGE = 15 V
10 IC = 22 A, Ta = 25°C
2
5 10 20
50
Gate Registance Rg (Ω)
(Inductive load)
R07DS0526EJ0100 Rev.1.00
Aug 26, 2011
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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