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Número de pieza | RJH60F3DPQ-A0 | |
Descripción | High Speed Power Switching | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJH60F3DPQ-A0 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Preliminary Datasheet
RJH60F3DPQ-A0
600 V - 20 A - IGBT
High Speed Power Switching
R07DS0391EJ0200
Rev.2.00
Jul 22, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-c
Tj
Tstg
Ratings
600
±30
40
20
80
80
178.5
0.7
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page RJH60F3DPQ-A0
Switching Characteristics (Typical) (1)
1000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
10
1 10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
240
VCC = 400 V, VGE = 15 V
200 IC = 30 A, Rg = 5 Ω
tr includes the diode recovery
160
120 tr
80 tf
td(off)
40 td(on)
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100000
10000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
Eon includes the diode recovery
1000
100
10
1
Eoff
Eon
10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
1200
800
Eoff
Eon
400
VCC = 400 V, VGE = 15 V
www.DataSheet.net/
IC = 30 A, Rg = 5 Ω
Eon includes the diode recovery
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RJH60F3DPQ-A0.PDF ] |
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RJH60F3DPQ-A0 | High Speed Power Switching | Renesas |
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